FeRAM- Ferroelectric RAM

Ferroelectric RAM (FeRAM or FRAM) is a random access memory similar in construction to DRAM but uses a ferroelectric layer instead of a dielectric layer to achieve non-volatility. FeRAM is one of a growing number of alternative non-volatile memory technologies that offer the same functionality as Flash memory. FeRAM advantages over Flash include: lower power usage, faster write performance and a much greater maximum number (exceeding 1016 for 3.3 V devices) of write-erase cycles. FeRAM disadvantages are: much lower storage densities than Flash devices, storage capacity limitations and higher cost.

FeRAM is competitive in niche applications where its operating characteristics give it an advantage over Flash. Compared to its more modern competitors MRAM and PCM, FeRAM volume production at Fujitsu began in 1999. FeRAMs at 1 megabit density were available in high volume in 2006 from both Fujitsu and Ramtron. Simtek Corporation introduced the first 256K monolithic nvSRAM in 1994, currently 4 megabit nvSRAM chips are available. Limited volume production of a 4 megabit MRAM began at Freescale Semiconductor in July 2006. Intel Corporation and STMicroelectronics began shipping prototype samples of 128 megabit PCM memory in February 2008. The first chip containing high-density and low-cost PMC memory was announced by ASU's Center for Applied Nanoionics in October 2007 to become available in 18 months.

Development of FeRAM began in the late 1980s. Work was done in 1991 at NASA's Jet Propulsion Laboratory on improving methods of read out, including a novel method of non-destructive readout using pulses of UV radiation.

Much of the current FeRAM technology was developed by Ramtron, a fabless semiconductor company. One major licensee is Fujitsu, who operate what is probably the largest semiconductor foundry production line with FeRAM capability. Since 1999 they have been using this line to produce standalone FeRAMs, as well as specialized chips (e.g. chips for smart cards) with embedded FeRAMs within. Fujitsu produces devices for Ramtron. Since at least 2001 Texas Instruments has collaborated with Ramtron to develop FeRAM test chips in a modified 130 nm process. In the fall of 2005 Ramtron reported that they were evaluating prototype samples of an 8 megabit FeRAM manufactured using Texas Instruments' FeRAM process. Fujitsu and Seiko-Epson were in 2005 collaborating in the development of a 180 nm FeRAM process. FeRAM research projects have also been reported at Samsung, Matsushita, Oki, Toshiba, Infineon, Hynix, Symetrix, Cambridge University, University of Toronto and the Interuniversity Microelectronics Centre (IMEC, Belgium).